BFS483 查看數據表（PDF） - Infineon Technologies

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BFS483

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

BFS483

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 25 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz, VBE = 0 ,

emitter grounded

fT

6

8

- GHz

Ccb

- 0.34 0.54 pF

Collector emitter capacitance

VCE = 10 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

- 0.13 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

-

1.1

-

Minimum noise figure

IC = 5 mA, VCE = 8 V, ZS = ZSopt,

f = 900 MHz

IC = 5 mA, VCE = 8 V, ZS = ZSopt,

f = 1.8 GHz

NFmin

dB

-

0.9

-

-

1.4

-

Power gain, maximum stable1)

Gms

IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

-

19

- dB

Power gain, maximum available2)

Gma

IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 1.8 GHz

- 12.5 - dB

Transducer gain

IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 900 MHz

IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 1.8 MHz

|S21e|2

dB

- 15.5 -

-

10

-

1Gms = |S21 / S12|

2Gma = |S21e / S12e| (k-(k²-1)1/2)

3

2013-07-25

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