BFP450(2001) 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

BFP450
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

SIEGET
25 BFP450

For non-linear simulation:

 Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.

 If you need simulation of the reverse characteristics, add the diode with the

C'-E'- diode data between collector and emitter.

 Simulation of package is not necessary for frequencies < 100MHz.

For higher frequencies add the wiring of package equivalent circuit around the

non-linear transistor and diode model.

Note:

 This transistor is constructed in a common emitter configuration. This feature causes

an additional reverse biased diode between emitter and collector, which does not

effect normal operation.

C

B

EE

EHA07307

Transistor Schematic Diagram

The common emitter configuration shows the following advantages:

 Higher gain because of lower emitter inductance.

 Power is dissipated via the grounded emitter leads, because the chip is mounted

on copper emitter leadframe.

Please note, that the broadest lead is the emitter lead.

Common Emitter S- and Noise-parameter

For detailed S- and Noise-parameters please contact your local Infineon Technologies

distributor or sales office to obtain a Infineon Technologies Application Notes

CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

4

Aug-20-2001

Share Link: