BFP81 查看數據表（PDF） - Vishay Semiconductors
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BFP81 Datasheet PDF : 11 Pages
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Not for new design, this product will be obsoleted soon
BFP81
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
• Small feedback capacitance
• Low noise figure
e3
• High transition frequency
• Lead (Pb)-free component
• Component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
Applications
RF amplifier up to 2 GHz, especially for mobile tele-
phone.
Mechanical Data
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Marking: FA
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb ≤ 60 °C
Storage temperature range
2
1
3
4
Electrostatic sensitive device.
Observe precautions for handling.
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
25
16
2
30
200
150
- 65 to + 150
19217
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
RthJA
450
K/W
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Document Number 85018
Rev. 1.5, 05-Sep-08
www.vishay.com
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