BFP81 查看數據表（PDF） - Vishay Semiconductors
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BFP81 Datasheet PDF : 11 Pages
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BFP81
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current VCE = 25 V, VBE = 0
Collector-base cut-off current VCB = 20 V, IE = 0
Emitter-base cut-off current
VEB = 2 V, IC = 0
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
Collector-emitter saturation
voltage
IC = 30 mA, IB = 3 mA
DC forward current transfer ratio VCE = 10 V, IC = 5 mA
VCE = 10 V, IC = 15 mA
Symbol
Min
Typ.
Max
Unit
ICES
100
μA
ICBO
100
nA
IEBO
10
μA
V(BR)CEO
16
V
VCEsat
0.2
0.4
V
hFE
70
100
150
hFE
70
100
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
VCE = 10 V, IC = 5 mA,
fT
f = 500 MHz
4.2
GHz
VCE = 10 V, IC = 15 mA,
fT
f = 500 MHz
5.8
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
0.3
pF
Collector-emitter capacitance VCE = 10 V, f = 1 MHz
Cce
0.2
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
1.2
pF
Noise figure
VCE = 10 V, ZS = 50 Ω,
F
f = 800 MHz, IC = 5 mA
1.4
dB
VCE = 10 V, ZS = ZSopt,
F
f = 2 GHz, IC = 10 mA
2.5
dB
Power gain
VCE = 10 V, ZS = 50 Ω,
Gpe
15.5
dB
ZL = ZLopt, f = 800 MHz,
IC = 5 mA
VCE = 10 V, ZS = 50 Ω,
Gpe
16.5
dB
ZL = ZLopt, f = 800 MHz,
IC = 10 mA
Linear output voltage - two tone VCE = 10 V, IC = 25 mA,
V1 = V2
160
mV
intermodulation test
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
Third order intercept point
VCE = 10 V, IC = 25 mA,
IP3
f = 800 MHz
27
dBm
www.vishay.com
2
Document Number 85018
Rev. 1.5, 05-Sep-08
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