BFR106 查看數據表（PDF） - Infineon Technologies

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BFR106

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

BFR106

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

VCE = 10 V, VBE = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 2 V, IC = 0

DC current gain

IC = 70 mA, VCE = 8 V, pulse measured

V(BR)CEO 15

-

-V

ICES

ICBO

µA

-

-

1

- 0.001 0.03

-

1

30 nA

IEBO

-

1

30

hFE

70 100 140 -

2

2013-11-21

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