BFR106 查看數據表（PDF） - Infineon Technologies

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BFR106

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

BFR106

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 70 mA, VCE = 8 V, f = 500 MHz

fT

3.5

5

-

Collector-base capacitance

VCB = 10 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb

- 0.85 1.2

Unit

GHz

pF

Collector emitter capacitance

VCE = 10 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

- 0.27 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

-

3.9

-

Minimum noise figure

IC = 20 mA, VCE = 8 V, ZS = ZSopt,

f = 900 MHz

NFmin

dB

-

1.8

-

IC = 20 mA, VCE = 8 V, ZS = ZSopt ,

f = 1.8 GHz

-

3

-

3

2013-11-21

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