Q62702-F1057 查看數據表（PDF） - Siemens AG

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Q62702-F1057

PNP Silicon High-Voltage Transistors

Siemens AG 

PNP Silicon High-Voltage Transistors

q Suitable for video output stages in TV sets

and switching power supplies

q High breakdown voltage

q Low collector-emitter saturation voltage

q Complementary types: BFN 16, BFN 18 (NPN)

BFN 17

BFN 19

Type

BFN 17

BFN 19

Marking

DG

DH

Ordering Code

(tape and reel)

Q62702-F884

Q62702-F1057

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current

Base current

Peak base current

Total power dissipation, TS = 130 ˚C

Junction temperature

Storage temperature range

Thermal Resistance

Junction - ambient2)

Junction - soldering point

VCE0

VCB0

VEB0

IC

ICM

IB

IBM

Ptot

Tj

Tstg

Rth JA

Rth JS

Pin Configuration

1

2

3

B

C

E

Package1)

SOT-89

Values

Unit

BFN 17 BFN 19

250

300

V

250

300

5

200

mA

500

100

200

1

W

150

˚C

– 65 … + 150

≤ 75

K/W

≤ 20

1) For detailed information see chapter Package Outlines.

2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

1

5.91

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