DF005M 查看數據表（PDF） - ON Semiconductor

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DF005M

Bridge Rectifiers

ON Semiconductor 

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

PD

RθJA

Power Dissipation

Thermal Resistance, Junction-to-Ambient(1), per Leg

Note:

1. Device mounted on PCB with 0.5 inch × 0.5 inch (13 mm × 13 mm).

Value

3.1

40

Unit

W

°C/W

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

VF Forward Voltage, per Element

IF = 1.0 A

IR

Reverse Current, per Element at Rated VR

TA = 25°C

TA = 125°C

I2t Rating for Fusing (t < 8.35 ms)

CJ Typical Capacitance, per Leg

VR = 4.0 V,

f = 1.0 MHz

Min.

Typ.

25

Max.

1.1

5.0

500

10

Unit

V

μA

A2s

pF

© 2001 Fairchild Semiconductor Corporation

DF005M - DF10M Rev. 3.3

2

www.fairchildsemi.com

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