2N60D 查看數據表（PDF） - CHONGQING PINGYANG ELECTRONICS CO.,LTD

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2N60D

2A mps,600 Volts N-CHANNEL MOSFET

CHONGQING PINGYANG ELECTRONICS CO.,LTD 

2N60(F,B,H,G,D)

2A mps,600 Volts N-CHANNEL MOSFET

FEATURE

 2A,600V,RDS(ON)=4Ω@VGS=10V/1A

 Low gate charge

 Low Ciss

 Fast switching

 100% avalanche tested

 Improved dv/dt capability

TO-220AB

2N60

ITO-220AB

2N60F

TO-262

2N60H

TO-263

2N60B

TO-252

2N60G

TO-251

2N60D

Absolute Maximum Ratings(TC=25℃,unless otherwise noted)

Parameter

Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current(Note1)

Single Pulse Avalanche Energy (Note 2)

Avalanche Current(Note1)

Repetitive Avalanche Energy (Note1)

Reverse Diode dV/dt (Note 3)

Operating Junction and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8"from case for 5 seconds

VDSS

VGSS

ID

IDM

EAS

IAR

EAR

dv/dt

TJ,TSTG

TL

Mounting Torque

6-32 or M3 screw

2N60

600

±30

2

8

120

2.0

5.4

4.5

-55 to +150

260

10

1.1

UNIT

V

A

mJ

A

mJ

V/ns

℃

℃

lbf·in

N·m

Thermal Characteristics

Parameter

Maximum Junction-to-Case

Maximum Power Dissipation

TC=25℃

Symbol

RthJC

PD

ITO-220

4

32

TO-220

2

62

TO-262

TO-263

2

62

TO-251

TO-252

6

21

Units

℃/W

W

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Rev. 14-1

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