2N60 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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2N60 Datasheet PDF : 3 Pages
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2N60
TO-251 Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V(BR)DSS
600V
RDS(on)MAX
5 Ω@10V
ID
TO- 251
2A
Features
● Robust High Voltage Termination
● Avalanche Energy Specified
● Diode is Characterized for Use in Bridge Circuits
● IDSS and VDS(on) Specified at Elevated Temperature
Marking:
● 2N60
G DS
Parameter
Drain-Source voltage
Gate-Source voltage
Drain Current-DC Value
Drain Current-Peak Value
Single Pulsed Avalanche Energy
Power Dissipation（ T a = 2 5 ℃ ）
Power Dissipation（ T c = 2 5 ℃ ）
Thermal Resistance fromJunctiontoCase
Thermal Resistance fromJunctiontoAmbient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
EAS
PD
PD
Rθ Jc
Rθ JA
Tj
Tstg
Value
600
±30
2
8
80
2
35
4.5
62.5
150
-55~150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Drain-Source Breakdown Voltage BVDSS
Conditions
VDS= VGS，ID=250uA
VGS=0V，ID=250uA
Min
2
600
Drain-Source On-Resistance
RDON
VGS=10V，ID=1A
Diode Forward Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
VFSD
IDSS
IGSS
IS=2A，VGS =0V
VDS =600V，VGS =0V
VGS =±30V，VDS =0V
Max
4
5
1.5
1
±100
High Diode Semiconductor
Unit
V
V
A
A
mJ
W
W
℃/W
℃/W
℃
℃
Unit
V
V
Ω
V
uA
uA
1
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