2N60 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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2N60 Datasheet PDF : 3 Pages
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Typical Characteristics
3.0
Pulsed
Output Characteristics
2.5
VGS= 6V、 8V、10V
2.0
VGS=5.5V
1.5
1.0
VGS=5V
0.5
0.0
0
VGS=4.5V
6
12
18
24
30
DRAIN TO SOURCE VOLTAGE VDS (V)
10
Ta=25℃
Pulsed
8
R
DS(ON)
——
I
D
6
VGS=10V
4
2
0
0.1
1
2
3
4
5
DRAIN CURRENT ID (A)
4
Pulsed
1
I
S
——
V
SD
0.1
Ta=100℃
0.01
Ta=25℃
1E-3
0.0
0.4
0.8
1.2
1.6
2.0
SOURCE TO DRAIN VOLTAGE VSD (V)
1.0
VDS=10V
Pulsed
0.5
Transfer Characteristics
Ta=25℃
Ta=100℃
0.0
0
30
25
1
2
3
4
5
6
7
GATE TO SOURCE VOLTAGE VGS (V)
R
DS(ON)
——
V
GS
Pulsed
ID=1A
20
Ta=100℃
Ta=25℃
15
10
5
0
2
4
6
8
10
12
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
5
4
ID=250uA
3
2
1
0
25
50
75
100
125
JUNCTION TEMPERATURE TJ (℃)
High Diode Semiconductor
2
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