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2N60L-TA3-R 查看數據表(PDF) - Unspecified

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2N60L-TA3-R
ETC
Unspecified ETC
2N60L-TA3-R Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Drain Current Continuous
Drain Current Pulsed (Note 2)
Avalanche Energy
Peak Diode Recovery dv/dt (Note 4)
TC = 25°C
TC = 100°C
Repetitive(Note 2)
Single Pulse(Note 3)
VDSS
VGSS
IAR
ID
IDP
EAR
EAS
dv/dt
600
±30
2.0
2.0
1.26
8.0
4.5
140
4.5
Total Power Dissipation
TC = 25°C
PD
Derate above 25°C
45
0.36
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD2.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
PACKAGE
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
SYMBOL
θJA
θJc
RATINGS
112
112
54
54
12
12
4
4
UNIT
°C / W
ELECTRICAL CHARACTERISTICS (TJ =25, unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
600
Zero Gate Voltage Drain Current
IDSS
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
Gate-Body
Leakage Forward IGSS
VGS = 30V, VDS = 0V
Current
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature
BVDSS/TJ ID = 250 µA
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250µA
2.0
VGS = 10V, ID =1A
VDS = 50V, ID = 1A (Note 1)
Input Capacitance
CISS
VDS =25V, VGS =0V, f =1MHz
Output Capacitance
Reverse Transfer Capacitance
COSS
CRSS
TYP MAX UNIT
V
10
µA
100 µA
100 nA
-100 nA
0.4
V/
4.0
V
3.8
5
2.25
S
270 350 pF
40
50
pF
5
7
pF
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