2N60 查看數據表（PDF） - Unspecified
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2N60 Datasheet PDF : 13 Pages
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I2N60
4.2 Thermal Characteristics
Parameter
Thermal Resistance Junction to Case-sink
Thermal Resistance Junction to Ambient
Symbol
RthJC
RthJA
Value
3.57
62.5
Unit
℃/W
℃/W
4.3 Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Condition
Off Characteristics
Drain-source Breakdown
Voltage
BVDSS
Drain-to-Source Leakage
IDSS
Current
Gate-to-Source Forward
Leakage
IGSSF
Gate-to-Source Reverse
Leakage
On Characteristics(Note 3)
IGSSR
Gate Threshold Voltage
VGS(th)
Drain-source on
Resistance
RDS(on)
Dynamic Characteristics(Note 4)
Forward Transfer
Conductance
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer
Capacitance
Crss
Switching Characteristics(note4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain(“Miller”)
Charge
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage(N
ote 3)
VFSD
ID=250μA,VGS=0V
VDS=600V,VGS=0V,TC=25℃
VDS=480V,VGS=0V,TC=125℃
VGS=+30V
VGS=-30V
VDS=VGS,ID=250μA
VGS=10V,ID=1A
VDS=15V,ID=1A
VGS=0V,VDS=25V,f=1.0MHz
ID=2A,
VDD=300V,
VGS=10V,
RG=18Ω
ID=2A,VDD=480V,VGS=10V
VGS=0V,IS=2A
Value
Min Typ Max
600 -- --
-- --
1
-- -- 100
-- -- 100
-- -- -100
2
--
4
--
4
4.5
2
-- --
-- 280 --
-- 30 --
-- 3.8 --
--
7.8 --
--
5.5 --
--
33 --
--
16 --
--
8.5 --
--
1.5 --
--
4 --
-- -- 1.5
Units
V
μA
μA
nA
nA
V
Ω
S
pF
nS
nS
nS
nS
nC
V
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
Page 2 of 13
Rev. 1.0
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