DMT2N60-TU 查看數據表（PDF） - DIYI Electronic Technology Co., Ltd.
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DMT2N60-TU Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
0
0 200 400 600 800 1000
Drain-Source Breakdown Voltage, BVDSS (V)
2N60
600V N-Channel Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Gate Threshold Voltage, VTH (V)
May,2015-REV.00
www.dyelec.com
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