2N60 查看數據表（PDF） - SUNMATE electronic Co., LTD

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2N60

N-CHANNEL POWER MOSFET

SUNMATE electronic Co., LTD 

THERMAL DATA

PARAMETER

Junction to Ambient

TO-220/ITO-220

TO-262/TO-263

TO-251/ TO-252

TO-220/ITO-220

TO-262/TO-263

Junction to Case

ITO-220

TO-251/ TO-252

SYMBOL

θJA

θJC

RATING

62.5

110

2.35

5.5

2.9

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

SYMBOL

TEST CONDITIONS

BVDSS

IDSS

VGS = 0V, ID = 250μA

VDS = 600V, VGS = 0V

Gate-Source Leakage Current

Forward

Reverse

VGS = 30V, VDS = 0V

IGSS

VGS = -30V, VDS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

VGS(TH)

RDS(ON)

VDS = VGS, ID = 250μA

VGS = 10V, ID =1A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

CISS

COSS

CRSS

VDS = 25V, VGS = 0V,

f = 1MHz

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tR

tD(OFF)

VDD =300V, ID =2A,

RG=25Ω (Note 1, 2)

Turn-Off Fall Time

tF

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

QGD

VDS= 480V,ID= 2.4A,

VGS= 10V (Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, ISD = 2.0 A

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

trr

Reverse Recovery Charge

QRR

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

VGS = 0 V, IS = 2A,

dIF/dt = 100 A/μs (Note 1)

2. Essentially independent of operating temperature

UNIT

°C/W

°C/W

MIN TYP MAX UNIT

600

V

10 μA

100 nA

-100 nA

2.0

4.0 V

4 4.4 Ω

300 - pF

45 - pF

2 - pF

10 - ns

25 - ns

20 - ns

25 -

ns

5.7 - nC

1.8 - nC

2 - nC

1.4 V

2.0 A

8.0 A

357

ns

2

μC

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