A Product Line of
Diodes Incorporated
ZXRE125
Absolute Maximum Ratings (Voltages to GND Unless Otherwise Stated)
Parameter
Reverse Current
Forward Current
Operating Temperature
Storage Temperature
Power Dissipation (TAMB = 25°C)
Symbol
VZ
TOMP
TSTG
PD
Rating
30
10
-40 to 85
-55 to 125
330
Unit
mA
mA
°C
°C
mW
Electrical Characteristics (Test conditions: Tamb = 25°C, unless otherwise specified.)
Symbol
Parameter
Condition
VR
IMIN
IR
TC(*)
Reverse breakdown voltage
IR = 100µA
Minimum operating current
Recommended operating current
Average reverse breakdown
voltage temperature coefficient
IR(min) to IR(max)
Min.
1.214
1.208
1.196
1.183
0.008
Typ.
1.220
1.220
1.220
1.220
4
20
Max.
1.226
1.232
1.244
1.257
8
20
75
ΔVR
Reverse Breakdown Change
IR = 30μA to 1mA
1
ΔIR
with Current Voltage
IR = 1mA to 12mA
10
ZR
EN
Notes:
Reverse dynamic impedance
Wideband noise voltage
IR = 1mA
f = 100Hz
IAC = 0.1IR
IR = 8µA to 100µA
f = 10Hz to 10kHz
0.2
0.6
60
Tol. (%)
C/0.5(1)
D/1
E/2
F/3
Unit
V
µA
mA
ppm/°C
mV
Ω
µV(rms)
1.
(*) TC =
(VR(MAX) – VR(MIN)) x 1000000
VR x (T(MAX) – T(MIN))
Note: VR(MAX) - VR(MIN) is the maximum deviation in reference
voltage measured over the full operating temperature range.
ZXRE125
Document number: DS32170 Rev. 8 - 2
2 of 5
www.diodes.com
June 2010
© Diodes Incorporated