ZXMN6A08E6Q 查看數據表（PDF） - Diodes Incorporated.
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ZXMN6A08E6Q Datasheet PDF : 8 Pages
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Typical Characteristics
ZXMN6A08E6Q
10 T = 25°C 10V
5V
4.5V
4V
3.5V
1
3V
0.1
V
GS
0.1
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
10
V = 10V
DS
T = 150°C
1
0.1
T = 25°C
0.01
2
3
4
5
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
3V
1
T = 25°C
3.5V
4V
4.5V
V
GS
5V
0.1
7V
10V
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
10 T = 150°C
1
10V 5V
4V
3.5V
3V
2.5V
0.1
V
GS
2V
0.01
0.1
1
10
V Drain-Source Voltage (V)
DS
Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
V = 10V
GS
I = 4.8A
D
R
DS(on)
V
GS(th)
V =V
GS
DS
I = 250uA
D
0
50
100
150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
10
T = 150°C
1
T = 25°C
0.1
V = 0V
GS
0.01
0.2 0.4 0.6 0.8 1.0 1.2
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
5 of 8
www.diodes.com
March 2015
© Diodes Incorporated
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