ZXT13N50DE6(1999) 查看數據表（PDF） - Diodes Incorporated.

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ZXT13N50DE6
(Rev.:1999)

50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

Diodes Incorporated. 

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VCBO

VCEO

VEBO

ICM

IC

IB

PD

PD

Tj:Tstg

ZXT13N50DE6

LIMIT

100

50

7.5

10

4

500

1.1

8.8

1.7

13.6

-55 to +150

UNIT

V

V

V

A

A

mA

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

Junction to Ambient (b)

RθJA

RθJA

113

°C/W

73

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

ISSUE 1 - NOVEMBER 1999

2

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