ZXT13N50DE6(1999) 查看數據表（PDF） - Diodes Incorporated.

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ZXT13N50DE6
(Rev.:1999)

50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

Diodes Incorporated. 

ZXT13N50DE6

TYPICAL CHARACTERISTICS

10

1

100m

DC

1s

100ms

10ms

1ms

100µs

Single Pulse Tamb=25°C

10m

100m

1

10

100

VCE Collector-Emitter Voltage (V)

Safe Operating Area

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0

20 40 60 80 100 120 140 160

Temperature (°C)

Derating Curve

120

100

80

D=0.5

60

40

D=0.2

20

Single Pulse

D=0.05

D=0.1

0

100µ 1m 10m 100m 1

10 100 1k

Pulse Width (s)

Transient Thermal Impedance

ISSUE 1 - NOVEMBER 1999

3

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