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W981208AH 查看數據表(PDF) - Winbond

零件编号
产品描述 (功能)
生产厂家
W981208AH
Winbond
Winbond Winbond
W981208AH Datasheet PDF : 44 Pages
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W981208AH
Pin Assignment
4M x 8 bit x 4 Banks SDRAM
Pin Number Pin Name
23 ~ 26, 22,
29 ~35
A0~ A11
20, 21
BS0, BS1
2, 5, 8, 11,
44, 47, 50, 53
DQ0 ~ DQ7
19
CS#
18
RAS#
17
CAS#
16
WE#
39
DQM
38
CLK
37
CKE
1, 14, 27
28, 41, 54
3, 9, 43, 49
VCC
VSS
VCCQ
6, 12, 46, 52 VSSQ
4, 7, 10, 13,
15, 36, 40, 42, NC
45, 48, 51
Function
Address
Bank Select
Data Input/
Output
Chip Select
Row Address
Strobe
Column Address
Strobe
Write Enable
input/output mask
Clock Inputs
Clock Enable
Power ( +3.3 V )
Ground
Power ( + 3.3 V )
for I/O buffer
Ground for I/O
buffer
No Connection
Description
Multiplexed pins for row and column address.
Row address : A0 ~ A11. Column address: A0 ~ A9.
Select bank to activate during row address latch time, or bank
to read/write during address latch time.
Multiplexed pins for data output and input.
Disable or enable the command decoder. When command
decoder is disabled, new command is ignored and previous
operation continues.
Command input. When sampled at the rising edge of the clock,
RAS#, CAS# and WE# define the operation to be executed.
Referred to RAS#
Referred to RAS#
The output buffer is placed at Hi-Z(with latency of 2) when DQM
is sampled high in read cycle. In write cycle, sampling DQM
high will block the write operation with zero latency.
System clock used to sample inputs on the rising edge of clock.
CKE controls the clock activation and deactivation. When CKE
is low, Power Down mode, Suspend mode, or Self Refresh
mode is entered.
Power for input buffers and logic circuit inside DRAM.
Ground for input buffers and logic circuit inside DRAM.
Separated power from VCC, used for output buffers to improve
noise.
Separated ground from VSS, used for output buffers to improve
noise.
No connection
Revision 1.0
Publication Release Date: March, 1999
-3-

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