VSC7926KF 查看數據表（PDF） - Vitesse Semiconductor
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VSC7926KF Datasheet PDF : 12 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7926
SDH/SONET 2.5Gbits/sec
Laser Diode Driver
Table 4: Recommended Operating Conditions
Symbol
Parameter
Min
Typ
Max Units
Conditions
GND
Positive Voltage Rail
0
V
VSS
Negative Voltage Rail
-5.5
-5.2
-4.9
V
Tcl
*Operational Temperature
-40
Tj
Junction Temperature
85**
125
C
Power dissipation = 1.25W
C
*Lower limit of specification is ambient temperature and upper limit is case temperature.
**See section “Calculation of the Maximum Case Temperature” for detailed maximum temperature calculations.
Table 5: Power Dissipation
Symbol
IVSS
Pd
Pdmax
Parameter
Power Supply Current (VSS)
Total Power Dissipation
Maximum Power Dissipation
Min Typ Max Units
Conditions
-
-
220
mA VSS = -5.5, IMOD = IBIAS = 0 mA
-
-
1210
mW
VSS = -5.5, IMOD = IBIAS = 0 mA,
Rload = 25 Ohms to GND
-
-
1815
mW
VSS = -5.5, IMOD = 60mA,
IBIAS = 50 mA, IOUT = 0 Volts
Table 6: Laser Driver DC Electrical Specifications
Symbol
IBIAS
IMOD
VIB
VIP
VOCM
Parameter
Programmable Laser Bias Current
Programmable Modulation Current
Laser Bias Control Voltage
Laser Modulation Control Voltage
Output Voltage Compliance
Min
Typ
Max Units Conditions
2
50
mA
-
2
-
60
mA
GND -2.5V
VSS + 2.1
V
VSS + 2.1
V
V
IBIAS = 50 mA
IMOD= 60 mA
VSS = -5.2V
Table 7: Laser Driver AC Electrical Specifications
Symbol
Parameter
Min Typ Max Units
tr tf
Output Rise and Fall Times
tsu
t Setup Data to Clock
th
t Hold
Table 8: Package Thermal Specifications
100
ps
50
ps
50
ps
Conditions
25 Ohm load, 20%-80%,
15mA < IMOD < 60 mA,
IBIAS = 40 mA
Symbol
Parameter
Min Typ Max Units
θJCC
Thermal Resistance from Junction to Case
25
°C/W
θJCMG Thermal Resistance from Junction to Case
32
°C/W
Conditions
Ceramic Package
Metal Glass Package
G52188-0, Rev 2.1
6/1/98
© VITESSE SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
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