ASI10728 查看數據表（PDF） - Advanced Semiconductor
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ASI10728 Datasheet PDF : 2 Pages
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VHB50-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB50-28F is an NPN
power transistor designed for 28 V
Class-C ground station transmitters, it
utilizes emitter ballasting and gold
metallization to provide optimum
VSWR capability.
FEATURES:
• Common Emitter
• PG = 6.0 dB at 50 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
6.5 A
VCBO
65 V
VCEO
35 V
VEBO
4.0 V
PDISS
75W
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
2.3 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
E
C
Ø.125 NOM.
FULL R
J
.125
B
E
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10728
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 200 mA
BVEBO
IE = 10 mA
ICBO
VCB = 30 V
hFE
VCE = 5.0 V
IC = 500 mA
MINIMUM TYPICAL MAXIMUM
35
65
4.0
2.0
10
150
UNITS
V
V
V
mA
---
Cob
VCB = 28 V
f = 1.0 MHz
80
pF
PG
VCE = 28 V
ηC
PIN = 12 W
POUT =50 W
f = 175 MHz
6.0
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
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