1N52 查看數據表（PDF） - New Jersey Semiconductor

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1N52

GOLD BONDED GERMANIUM DIODE

New Jersey Semiconductor 

JbE.mL-CondiL<2toi D^iodueta, Line.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

1N52

GOLD BONDED GERMANIUM DIODE

FEATURES

Low forward voltage drop—low power consumption

Thirty years of proven reliability—one million hours mean time between failures (MTBF)

. Very low noise level

Metallurgical^ bonded

ABSOLUTE MAXIMUM RATINGS (at 25 °C. unless otherwise specified)

Peak Inverse Voltage

Peak Forward Current

Operating Temperature Range

Average Power Dissipation

ELECTRICAL CHARACTERISTICS

Symbol

Peak Inverse Voltage

PIV

Reverse Current

Ir

Forward Voltage

Vf

85 Volts

500 mA

- 65 °C to 85 °C

80 mW

Conditions Min Max Unit

1 mA 85

V

50 V

150 HA

5 mA

1

V

T°C

25 °C

25 °C

25 °C

MECHANICAL

r.o02i91"' DIA

1'

.300'

MIN

MAX

•107>

.095'

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurateand reliable at the time of going

to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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