UPA572T 查看數據表（PDF） - NEC => Renesas Technology

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UPA572T

N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA572T

N-CHANNEL MOS FET (5-PIN 2 CIRCUITS)

FOR SWITCHING

The µPA572T is a super-mini-mold device provided with

two MOS FET circuits. It achieves high-density mounting

and saves mounting costs.

FEATURES

• Two source common MOS FET circuits in package the

same size as SC-70

• Directly driven by 3 V power supply

• Automatic mounting supported

PACKAGE DIMENSIONS (in millimeters)

0.2

+0.1

–0

0.15

+0.1

–0.05

0 to 0.1

0.65 0.65

1.3

2.0 ±0.2

EQUIVALENT CIRCUIT

5

4

0.7

0.9 ±0.1

1

2

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

SYMBOL

TEST CONDITIONS

Drain to Source Voltage

VDSS

VGS = 0

Gate to Source Voltage

VGSS

VDS = 0

Drain Current (DC)

ID(DC)

Drain Current (pulse)

ID(pulse)

PW ≤ 10 ms, Duty Cycle ≤ 50 %

Total Power Dissipation

PT

Channel Temperature

Tch

Operating Temperature

Topt

Storage Temperature

Tstg

PIN CONNECTION

1. Gate 1 (G1)

2. Source (common)

3. Gate 2 (G2)

4. Drain 2 (D2)

5. Drain 1 (D1)

Marking: DB

3

RATINGS

30

±7

±100

±200

200 (Total)

150

–55 to +80

–55 to +150

UNIT

V

V

mA

mA

mW

˚C

˚C

˚C

Document No. G11244EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

©

1996

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