UPA572T 查看數據表（PDF） - NEC => Renesas Technology
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UPA572T Datasheet PDF : 6 Pages
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µPA572T
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain Cut-off Current
IDSS
VDS = 30 V, VGS = 0
Gate Leakage Current
IGSS
VGS = ±5 V, VDS = 0
Gate Cut-off Voltage
VGS(off)
VDS = 3 V, ID = 10 µA
Forward Transfer Admittance
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VDS = 3 V, ID = 10 mA
Drain to Source On-State Resistance RDS(on)1 VGS = 2.5 V, ID = 1 mA
Drain to Source On-State Resistance RDS(on)2 VGS = 4.0 V, ID = 10 mA
Input Capacitance
Ciss
VDS = 5.0 V, VGS = 0, f = 1 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
Rise Time
td(on)
tr
VDD = 5 V, ID = 10 mA, VGS(on) = 5 V,
RG = 10 Ω, RL = 500 Ω
Turn-Off Delay Time
td(off)
Fall Time
tf
MIN.
0.8
20
TYP.
1.0
50
7
5
16
14
2
15
20
100
100
MAX.
1.0
±3.0
1.5
13
8
UNIT
µA
µA
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED)
RG
PG.
VGS
0
τ
τ = 1µs
Duty Cycle ≤ 1 %
DUT
RL
VDD
VGS
Gate
voltage
waveform
0 10 %
VGS(on)
90 %
ID
90 %
Drain
current
waveform
ID
0 10 %
td(on)
tr td(off)
ton
90 %
10 %
tr
toff
2
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