UPC2756T 查看數據表（PDF） - NEC => Renesas Technology
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UPC2756T Datasheet PDF : 4 Pages
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3 V SILICON MMIC L-BAND UPC2756T
FREQUENCY DOWN CONVERTER
FEATURES
• WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz
• ON BOARD OSCILLATOR
• LOW CURRENT CONSUMPTION: 6 mA
• SUPER SMALL T06 PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2756T is a silicon monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with fT approaching 20 GHz.
This device was designed as the first down converter for GPS
and wireless communications. Operating on a 3 volt supply,
this IC is ideally suited for hand held portable designs.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
INTERNAL BLOCK DIAGRAM
RF
Input
LO1 LO2
VCC GND
IF
Output
ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = Zs = 50 Ω, Vcc = 3V)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
ICC
fRF
fIF
CG
NF
PSAT
OIP3
ISO
PN
RTH (J-A)
Circuit Current (no signal)
RF Frequency Response
(3 dB down from the gain at fRF = 900 MHz, fIF = 150 MHz)
IF Frequency Response
(3 dB down from the gain at fRF = 900 MHz, fIF = 150 MHz)
Conversion Gain1 fRF = 900 MHz, fIF = 150 MHz
fRF = 1.6 GHz, fIF = 20 MHz
Noise Figure
fRF = 900 MHz, fIF = 150 MHz
fRF = 1.6 GHz, fIF = 20 MHz
Saturated Output Power2 fRF = 900 MHz, fIF = 150 MHz
fRF = 1.6 GHz, fIF = 20 MHz
SSB Output 3rd Order Intercept Point
fRF = 0.8~2.0 GHz, fIF = 100 MHz
LO Leakage, fLO = 0.8 ~2.0 GHz
at RF pin
at IF pin
Phase Noise3, fOSC = 1.9 GHz
Thermal Resistance (Junction to Ambient)
Free Air
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
mA
GHz
MHz
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBc/Hz
°C/W
°C/W
UPC2756T
T06
MIN
TYP
3.5
6.0
0.1
10
11
14
11
14
10
13
-11
-8
-15
-12
0
-35
-23
-68
MAX
8.0
2.0
300
17
17
13
16
620
230
Notes:
1. PRF = -40 dBm.
2. PRF = -10 dBm.
3. See Application Circuit.
California Eastern Laboratories
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