UT52L1616MC-8 查看數據表（PDF） - Utron Technology Inc
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UT52L1616MC-8 Datasheet PDF : 36 Pages
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UTRON
Preliminary Rev. 0.91
UT52L1616
1M X 16 BIT SDRAM
Read with auto precharge [READ A]: This command automatically performs a precharge operation after a
burst read with a burst length of 1, 2, 4 or 8.
Burst stop command [BST]: This command stops the current burst operation.
No operation [NOP]: This command is not an execution command. However, the internal operations continue.
DQM Truth Table
Function
Upper byte write enable/output enable
Lower byte write enable/output enable
Upper byte write inhibit/output disable
Lower byte write inhibit/output disable
Note: H: VIH. L: VIL. x: VIH or VIL.
Symbol
ENBU
ENBL
MASKU
MASKL
CKE
n-1
H
H
H
H
CKE
n
x
x
x
x
DQMU
L
x
H
x
DQML
x
L
x
H
The UT52L1616 can mask input/output data by means of DQMU and DQML. DQMU masks the upper byte and
DQML masks the lower byte.
During reading, the output buffer is set to Low-Z by setting DQMU/DQML to Low, enabling data output. On the
other hand, when DQMU/DQML is set to High, the output buffer becomes High-Z, disabling data output.
During writing, data is written by setting DQMU/DQML to Low. When DQMU/DQML is set to High, the previous
data is held (the new data is not written). Desired data can be masked during burst read or burst write by setting
DQMU/DQML. For details, refer to the DQM control section of the UT52L1616 operating instructions.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
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