DYNAMIC CHARACTERISTICS
MPS3646
200
100
70
50
30
20
10
7.0
5.0
1.0
VCC = 10 V
TJ = 25°C
td @ VEB(off) = 3 V
2V
0V
2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 8. Delay Time
200
100
70
VCC = 10 V
50
30
20
VCC = 3 V
IC/IB = 10
TJ = 25°C
TJ = 125°C
10
7.0
5.0
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 9. Rise Time
50
TJ = 25°C
TJ = 125°C
30
IC/IB = 20
IC/IB = 10
20
10
7.0
5.0
1.0 2.0
^ ts′ ts – 1/8 tf
IB1 = IB2
5.0 10 20
50
IC, COLLECTOR CURRENT (mA)
Figure 10. Storage Time
100 200
200
100
70
50
30
20
10
7.0
5.0
1.0 2.0
VCC = 10 V
TJ = 25°C
TJ = 125°C
IC/IB = 20
IC/IB = 10
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 11. Fall Time
10
MAX
TYP
7.0
Cibo
5.0
3.0
Cobo
2.0
0.1 0.2
0.5
1.0 2.0
REVERSE BIAS (Vdc)
5.0
10
Figure 12. Junction Capacitance
1000
700
IC/IB = 10
500
TJ = 25°C
TJ = 125°C
300
200
QT
100
VCC = 3 V
70
50
VCC = 10 V
QA
30 VCC = 3 V
20
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 13. Maximum Charge Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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