MURB1620CT 查看數據表（PDF） - Inchange Semiconductor
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MURB1620CT Datasheet PDF : 2 Pages
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Ultrafast Rectifier
INCHANGE Semiconductor
MURB1620CT
FEATURES
·Guarding for over voltage protection
·Dual rectifier construction,positive center tap
·Metal of silicon rectifier,majority carrier conduction
·Low forward voltage,high efficiency
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching power supply
·Power switching circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
200
V
16
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half- 100
A
wave, single phase, 60Hz)
PD
Maximum power dissipation
83.3
W
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
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