MTSF3N03HD 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

生产厂家

MTSF3N03HD

Power MOSFET 3 Amps, 30 Volts

ON Semiconductor 

MTSF3N03HD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(Cpk ≥ 2.0)

(Notes 2. & 4.) V(BR)DSS

(VGS = 0 Vdc, ID = 250 µAdc)

30

–

Temperature Coefficient (Positive)

–

27

Vdc

–

–

mV/°C

Zero Gate Voltage Drain Current

(VDS = 24 Vdc, VGS = 0 Vdc)

(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

µAdc

–

–

1.0

–

–

25

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

–

–

100

nAdc

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

(Cpk ≥ 2.0)

(Note 4.)

VGS(th)

(VDS = VGS, ID = 250 µAdc)

1.0

1.5

Threshold Temperature Coefficient (Negative)

–

4.5

Vdc

–

–

mV/°C

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.8 Adc)

(VGS = 4.5 Vdc, ID = 1.9 Adc)

(Cpk ≥ 2.0)

(Note 4.)

Forward Transconductance (VDS = 10 Vdc, ID = 1.9 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (Note 3.)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

(VDS = 15 Vdc, ID = 3.7 Adc,

VGS = 10 Vdc, RG = 6 Ω) (Note 2.)

Fall Time

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

(VDD = 15 Vdc, ID = 1.9 Adc,

VGS = 4.5 Vdc, RG = 6 Ω) (Note 2.)

Fall Time

Gate Charge

(VDS = 24 Vdc, ID = 3.7 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 3.7 Adc, VGS = 0 Vdc) (Note 2.)

(IS = 3.7 Adc, VGS = 0 Vdc,

TJ = 125°C)

Reverse Recovery Time

(IS = 3.7 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (Note 2.)

Reverse Recovery Storage Charge

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

4. Reflects typical values.

Max limit – Typ

Cpk = 3 x SIGMA

RDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

trr

ta

tb

QRR

–

35

–

45

2.0

–

mΩ

40

60

–

Mhos

–

420

–

pF

–

190

–

–

65

–

–

7.0

–

ns

–

19

–

–

32

–

–

36

–

–

7.0

–

ns

–

11

–

–

29

–

–

23

–

–

18.5

26

nC

–

1.4

–

–

5.5

–

–

7.1

–

Vdc

–

0.82

1.0

–

0.7

–

–

28

–

ns

–

14

–

–

14

–

–

0.028

–

µC

http://onsemi.com

3

Share Link: