MTD6N20E 查看數據表（PDF） - Motorola => Freescale

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MTD6N20E

TMOS E-FET Power Field Effect Transistors DPAK for Surface Mount

Motorola => Freescale 

MTD6N20E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 µAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 200 Vdc, VGS = 0 Vdc)

(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

V(BR)DSS

200

—

IDSS

—

—

IGSS

—

VGS(th)

2.0

—

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)

RDS(on)

—

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 6.0 Adc)

(ID = 3.0 Adc, TJ = 125°C)

VDS(on)

—

—

Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)

gFS

1.5

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 100 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Gate Charge

(See Figure 8)

(VDS = 160 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)

QT

—

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 6.0 Adc, VGS = 0 Vdc)

(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

Reverse Recovery Time

(See Figure 14)

(IS = 6.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

—

ta

—

tb

—

QRR

—

LD

—

Internal Source Inductance

LS

—

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

—

—

Vdc

689

—

mV/°C

µAdc

—

10

—

100

—

100

nAdc

3.0

4.0

Vdc

7.1

—

mV/°C

0.46

0.700

Ohm

Vdc

2.9

5.0

—

4.4

—

—

mhos

342

480

pF

92

130

27

55

8.8

17.6

ns

29

58

22

44

20

40.8

13.7

21

nC

2.7

—

7.1

—

5.9

—

Vdc

0.99

1.2

0.9

—

138

—

ns

93

—

45

—

0.74

—

µC

4.5

—

nH

7.5

—

nH

2

Motorola TMOS Power MOSFET Transistor Device Data

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