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MTD6P10E 查看數據表(PDF) - ON Semiconductor

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产品描述 (功能)
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MTD6P10E
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MTD6P10E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MTD6P10E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ±15 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 3.0 Adc)
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 50 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc, RG = 9.1 W)
Fall Time
Gate Charge (See Figure 8)
(VDS = 80 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(See Figure 14)
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min
Typ
Max Unit
100
124
Vdc
mV/°C
mAdc
10
100
100 nAdc
2.0
2.9
4.0
Vdc
4.0
mV/°C
0.56 0.66
W
Vdc
3.6
4.8
4.2
1.5
3.0
mhos
550
840
pF
154
240
27
56
12
25
ns
29
60
18
40
9
20
15.3
22
nC
4.1
7.1
6.8
Vdc
1.8
5.0
1.5
112
ns
92
20
0.603
mC
4.5
nH
7.5
nH
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