MTW10N100E 查看數據表（PDF） - Motorola => Freescale

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MTW10N100E

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole

Motorola => Freescale 

TYPICAL ELECTRICAL CHARACTERISTICS

MTW10N100E

20

18 TJ = 25°C

16

VGS = 10 V

6V

14

12

10

5V

8

6

4

2

4V

0

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

20

18 VDS ≥ 10 V

16

14

12

10

8

25°C

6

4

100°C

TJ = –55°C

2

0

2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

2.4

VGS = 10 V

2.0

TJ = 100°C

1.6

1.2

25°C

0.8

– 55°C

0.4

0

0 2 4 6 8 10 12 14 16 18 20

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

1.56

TJ = 25°C

1.48

1.40

1.32

1.24

VGS = 10 V

1.16

15 V

1.08

1.00

0 2 4 6 8 10 12 14 16 18 20

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

2.8

VGS = 10 V

2.4 ID = 5 A

2.0

1.6

1.2

0.8

0.4

0

–50 –25

0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

100000

10000

VGS = 0 V

1000

TJ = 125°C

100°C

100

25°C

10

1

0 100 200 300 400 500 600 700 800 900 1000

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

Motorola TMOS Power MOSFET Transistor Device Data

3

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