MRF10150 查看數據表（PDF） - Motorola => Freescale

零件编号

产品描述 (功能)

生产厂家

MRF10150

Microwave Pulse Power Transistor

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)

V(BR)CES

Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)

Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

Collector Cutoff Current (VCB = 36 Vdc, IE = 0)

V(BR)CBO

V(BR)EBO

ICBO

ON CHARACTERISTICS

DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)

hFE

FUNCTIONAL TESTS

Common–Base Amplifier Power Gain

(VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz)

GPB

Collector Efficiency

η

(VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz)

Load Mismatch

ψ

(VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz,

VSWR = 10:1 All Phase Angles)

Min

Typ

Max

Unit

65

—

—

Vdc

65

—

—

Vdc

3.5

—

—

Vdc

—

—

25

mAdc

20

—

—

—

9.5

10

—

dB

40

—

—

%

No Degradation in Output Power

RF

INPUT

Z5

Z1 Z2 Z3 Z4

C2

C3

L1

D.U.T.

Z6 Z7 Z8 Z9

+

C4

C1

+

–

RF

OUTPUT

.081

0.943

.334

C1 — 82 pF 100 Mil Chip Capacitor

C2 — 39 pF 100 Mil Chip Capacitor

C3 — 0.1 µF

C4 — 100 µF, 100 Vdc, Electrolytic

L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long

Z1–Z9 — Microstrip, See Details

Board Material — Teflon Glass Laminate

Dielectric Thickness = 0.030″

εr = 2.55, 2 Oz. Copper

.625

.15

.275

.081

1.383

.081

.489

1.803

.522

1.751

.081 .787

.100

.081

.583

.37

.363

1.0

.081

MRF10150

2

Figure 1. Test Circuit

MOTOROLA RF DEVICE DATA

Share Link: