MMFT1N10E 查看數據表（PDF） - Motorola => Freescale

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MMFT1N10E

Medium Power Field Effect Transistor

Motorola => Freescale 

MMFT1N10E

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250 µA)

Zero Gate Voltage Drain Current, (VDS = 100 V, VGS = 0)

Gate–Body Leakage Current, (VGS = 20 V, VDS = 0)

ON CHARACTERISTICS

Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)

Static Drain–to–Source On–Resistance, (VGS = 10 V, ID = 0.5 A)

Drain–to–Source On–Voltage, (VGS = 10 V, ID = 1 A)

Forward Transconductance, (VDS = 10 V, ID = 0.5 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 20 V,

VGS = 0,

f = 1 MHz)

SWITCHING CHARACTERISTICS

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 25 V, ID = 0.5 A

VGS = 10 V, RG = 50 ohms,

RGS = 25 ohms)

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

(VDS = 80 V, ID = 1 A,

VGS = 10 Vdc)

See Figures 15 and 16

SOURCE DRAIN DIODE CHARACTERISTICS(1)

Forward On–Voltage

IS = 1 A, VGS = 0

Forward Turn–On Time

Reverse Recovery Time

IS = 1 A, VGS = 0,

dlS/dt = 400 A/µs,

VR = 50 V

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ton

trr

Min

Typ

Max

Unit

100

—

—

Vdc

—

—

10

µAdc

—

—

100

nAdc

2

—

4.5

Vdc

—

—

0.25

Ohms

—

—

0.33

Vdc

—

2.2

—

mhos

—

410

—

—

145

—

pF

—

55

—

—

15

—

—

15

—

ns

—

30

—

—

32

—

—

7

—

—

1.3

—

nC

—

3.2

—

—

0.8

—

Vdc

Limited by stray inductance

—

90

—

ns

2

Motorola TMOS Power MOSFET Transistor Device Data

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