MMFT1N10ET1 查看數據表（PDF） - Motorola => Freescale
零件编号
产品描述 (功能)
生产厂家
MMFT1N10ET1 Datasheet PDF : 10 Pages
| |||
10
10 V 8 V
9V
8
6
7V
TJ = 25°C
6V
4
5V
2
VGS = 4 V
0
0
2
4
6
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On Region Characteristics
4
TJ = – 55°C
VDS = 10 V
100°C
3
25°C
2
1
0
0
2
4
6
8
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
0.5
TJ = 25°C
0.4
ID = 1 A
0.3
0.2
0.1
0
4
6
8
10
12
14
16
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance versus
Gate–to–Source Voltage
MMFT1N10E
1.2
VDS = VGS
ID = 1.0 mA
1.1
1.0
0.9
0.8
0.7
– 50
0
50
100
150
TJ, JUNCTION TEMP (°C)
Figure 2. Gate–Threshold Voltage Variation
With Temperature
0.5
VGS = 10 V
0.4
0.3
0.2
0.1
TJ = 100°C
25°C
– 55°C
0
0
2
4
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
0.5
VGS = 10 V
0.4
ID = 1 A
0.3
0.2
0.1
0
– 50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. On–Resistance versus Junction
Temperature
Motorola TMOS Power MOSFET Transistor Device Data
3
Share Link: 