MMFT107T3 查看數據表（PDF） - Motorola => Freescale

零件编号

产品描述 (功能)

生产厂家

MMFT107T3

Medium Power Field Effect Transistor

Motorola => Freescale 

MMFT107T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0, ID = 10 µA)

Zero Gate Voltage Drain Current

(VDS = 130 V, VGS = 0)

Gate–Body Leakage Current — Reverse

(VGS = 15 Vdc, VDS = 0)

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 200 mA)

Drain–to–Source On–Voltage

(VGS = 10 V, ID = 200 mA)

Forward Transconductance

(VDS = 25 V, ID = 250 mA)

V(BR)DSS

200

—

IDSS

—

—

IGSS

—

—

—

Vdc

30

nAdc

10

nAdc

VGS(th)

1.0

—

3.0

Vdc

RDS(on)

—

—

14

Ohms

VDS(on)

—

—

2.8

Vdc

gfs

—

300

—

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

Ciss

Coss

Crss

—

60

—

pF

—

30

—

—

6.0

—

SOURCE DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage

Continuous Source Current, Body

Diode

Pulsed Source Current, Body Diode

(VGS = 0,

IS = 250 mA)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

VF

—

0.8

—

V

IS

—

—

250

mA

ISM

—

—

500

2.5

TJ = 25°C

2

TYPICAL ELECTRICAL CHARACTERISTICS

VGS = 10 V

500

VDS = 10 V

400

1.5

6V 5V

4V

1

3V

0.5

0

0

2

4

6

8

10

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

300

200

100

TJ = 125°C

25°C

– 55°C

0

0

1

2

3

4

5

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Share Link: