MMFT107T1 查看數據表（PDF） - ON Semiconductor

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MMFT107T1

Power MOSFET 250 mA, 200 Volts

ON Semiconductor 

MMFT107T1

Preferred Device

Power MOSFET

250 mA, 200 Volts

N−Channel SOT−223

This Power MOSFET is designed for high speed, low loss power

switching applications such as switching regulators, dc−dc converters,

solenoid and relay drivers. The device is housed in the SOT−223

package which is designed for medium power surface mount

applications.

• Silicon Gate for Fast Switching Speeds

• Low Drive Requirement

• The SOT−223 Package can be soldered using wave or reflow.

The formed leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain−to−Source Voltage

Gate−to−Source Voltage − Non−Repetitive

Drain Current

Total Power Dissipation @ TA = 25°C

(Note 1.)

Derate above 25°C

Operating and Storage Temperature

Range

VDSS

VGS

ID

PD

TJ, Tstg

200 Volts

± 20 Volts

250 mAdc

0.8 Watts

6.4

−65 to

150

mW/°C

°C

THERMAL CHARACTERISTICS

Thermal Resistance −

Junction−to−Ambient

RθJA

156

°C/W

Maximum Temperature for Soldering

Purposes

Time in Solder Bath

TL

260

°C

10

Sec

1. Device mounted on FR−4 glass epoxy printed circuit using minimum

recommended footprint.

http://onsemi.com

250 mA

200 VOLTS

RDS(on) = 14 W

N−Channel

D

G

S

MARKING

DIAGRAM

1

2

3

4 TO−261AA

CASE 318E

STYLE 3

FT107

LWW

L

= Location Code

WW = Work Week

PIN ASSIGNMENT

4 Drain

© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 5

123

Gate Drain Source

ORDERING INFORMATION

Device

Package

Shipping

MMFT107T1

MMFT107T3

SOT−223 1000 Tape & Reel

SOT−223 4000 Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

1

Publication Order Number:

MMFT107T1/D

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