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MMFT107T1 Datasheet PDF : 7 Pages
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MMFT107T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0, ID = 10 μA)
Zero Gate Voltage Drain Current
(VDS = 130 V, VGS = 0)
Gate−Body Leakage Current − Reverse
(VGS = 15 Vdc, VDS = 0)
V(BR)DSS
200
−
IDSS
−
−
IGSS
−
−
−
Vdc
30
nAdc
10
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 200 mA)
Drain−to−Source On−Voltage
(VGS = 10 V, ID = 200 mA)
Forward Transconductance
(VDS = 25 V, ID = 250 mA)
VGS(th)
1.0
−
3.0
Vdc
RDS(on)
−
−
14
Ohms
VDS(on)
−
−
2.8
Vdc
gfs
−
300
−
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Ciss
Coss
Crss
−
60
−
pF
−
30
−
−
6.0
−
SOURCE DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
Continuous Source Current, Body
Diode
Pulsed Source Current, Body
Diode
(VGS = 0,
IS = 250 mA)
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
VF
−
0.8
−
V
IS
−
−
250
mA
ISM
−
−
500
2.5
TJ = 25°C
2
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 10 V
500
VDS = 10 V
400
1.5
6V 5V
4V
1
3V
0.5
0
0
2
4
6
8
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
300
200
100
TJ = 125°C
25°C
−55 °C
0
0
1
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
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2
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