MMFT107T1 查看數據表（PDF） - ON Semiconductor
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MMFT107T1 Datasheet PDF : 7 Pages
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MMFT107T1
TYPICAL ELECTRICAL CHARACTERISTICS
10
VGS = 10 V
8
6
TJ = 125°C
4
25°C
2
−55 °C
0
0
100
200
300
400
500
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
10
ID = 1 A
VGS = 10 V
1
0.1
−75 −50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. On−Resistance Variation with Temperature
1
250
VGS = 0 V
200
f = 1 MHz
TJ = 25°C
150
0.1
100
Ciss
TJ = 125°C
25°C
0.01
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE−DRAIN DIODE FORWARD VOLTAGE (VOLTS)
Figure 5. Source−Drain Diode Forward Voltage
50
Coss
Crss
0
0
5
10
15
20
25
30
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
10
9 ID = 200 mA
8
7
6
VDS = 100 V
5
4
160 V
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Gate Charge versus Gate−to−Source Voltage
2
VDS = 10 V
1.5
1
TJ = −55°C
0.5
25°C
125°C
0
0
100
200
300
400
500
ID, DRAIN CURRENT (AMPS)
Figure 8. Transconductance
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