E50A2CBS 查看數據表（PDF） - KEC
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E50A2CBS Datasheet PDF : 1 Pages
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SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
·Average Forward Current : IO=50A.
·Repetive Peak Reverse Voltage : VRRM=200V
POLARITY
E50A2CBS E50A2CBR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Revese Voltage
Junction Temperature
Storage Temperature Range
IF(AV)
IFSM
VRRM
Tj
Tstg
RATING
50
380 (60Hz)
200
-40～215
-40～215
UNIT
A
A
V
℃
℃
E50A2CBS, E50A2CBR
STACK SILICON DIFFUSED DIODE
A
K
H
EI
JD
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3+_ 0.04
4.2+_ 0.2
8.0+_ 0.2
TYP 0.5
Φ10.0+_ 0.2
0.4+_ 0.1x45
8.5 MAX
0.2+0.1
28.35+_ 0.5
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Voltage
Reverse Current
Transient Thermal Resistance
Reverse Leakage Current Under
High Temperature
Reverse Recovery Time
Temperature Resistance
VF
VR
IR
ΔVF
HIR
trr
Rth
TEST CONDITION
IFM=100A
IR=5mA
VR=200V
IFM=100A, IM=100mA, Pw=100ms
Ta=150℃, VR=200V
IF=100mA, IR=100mA
DC total Junction to case
MIN.
-
200
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
MAX.
1.05
-
50
80
UNIT
V
V
μA
mV
2.5
mA
15
μs
0.6
℃/W
2002. 4. 9
Revision No : 2
1/1
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