NCP161 查看數據表（PDF） - ON Semiconductor
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NCP161
ON Semiconductor
NCP161 Datasheet PDF : 22 Pages
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NCP161
ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise
noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4).
Parameter
Test Conditions
Symbol Min
Typ
Max Unit
Operating Input Voltage
Output Voltage Accuracy
Line Regulation
Load Regulation
Dropout Voltage (Note 5)
Dropout Voltage (Note 5)
Output Current Limit
Short Circuit Current
Quiescent Current
Shutdown Current
EN Pin Threshold Voltage
EN Pull Down Current
Turn−On Time
Power Supply Rejection Ratio
VIN
1.9
5.5
V
VIN = VOUT(NOM) + 1 V
0 mA ≤ IOUT ≤ 450 mA
WLCSP4, XDFN4
VOUT
−2
VIN = VOUT(NOM) + 1 V
SOT23−5
−2
+2
%
+2
VOUT(NOM) + 1 V ≤ VIN ≤ 5.5 V
LineReg
0.02
%/V
IOUT = 1 mA to 450 mA
WLCSP4, XDFN4
WLCSP4, XDFN4
SOT23−5
LoadReg
0.001
0.005
0.008
%/mA
IOUT = 450 mA
WLCSP4, XDFN4
VOUT(NOM) = 1.8 V
VOUT(NOM) = 1.85 V
VOUT(NOM) = 2.5 V
VOUT(NOM) = 2.8 V
VOUT(NOM) = 2.85 V
VOUT(NOM) = 3.0 V
VOUT(NOM) = 3.3 V
VOUT(NOM) = 3.5 V
VOUT(NOM) = 4.5 V
VOUT(NOM) = 5.0 V
VOUT(NOM) = 5.14 V
IOUT = 450 mA
SOT23−5
VOUT(NOM) = 1.8 V
VOUT(NOM) = 2.8 V
VOUT(NOM) = 3.0 V
VOUT(NOM) = 3.3 V
VOUT = 90% VOUT(NOM)
VOUT = 0 V
IOUT = 0 mA
VEN ≤ 0.4 V, VIN = 4.8 V
VDO
VDO
ICL
ISC
IQ
IDIS
300
450
290
393
190
315
175
290
170
290
165
275
mV
160
260
150
255
120
210
105
190
105
185
365
480
260
345
mV
240
330
225
305
450
700
mA
690
18
23
mA
0.01
1
mA
EN Input Voltage “H”
EN Input Voltage “L”
VEN = 4.8 V
VENH
1.2
VENL
0.4
V
IEN
0.2
0.5
mA
COUT = 1 mF, From assertion of VEN to
VOUT = 95% VOUT(NOM)
120
ms
IOUT = 20 mA
f = 100 Hz
91
f = 1 kHz
f = 10 kHz
PSRR
98
82
dB
f = 100 kHz
48
Output Voltage Noise
f = 10 Hz to 100 kHz
IOUT = 1 mA
IOUT = 250 mA
VN
14
10
mVRMS
Thermal Shutdown Threshold
Temperature rising
TSDH
160
°C
Temperature falling
TSDL
140
°C
Active output discharge resistance
VEN < 0.4 V, Version A only
RDIS
280
W
Line transient (Note 6)
VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) + 1.6 V)
in 30 ms, IOUT = 1 mA
VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) + 1 V)
TranLINE
−1
in 30 ms, IOUT = 1 mA
mV
+1
Load transient (Note 6)
IOUT = 1 mA to 450 mA in 10 ms
IOUT = 450 mA to 1mA in 10 ms
−40
TranLOAD
mV
+40
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM).
6. Guaranteed by design.
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