81719-030 查看數據表（PDF） - STMicroelectronics
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81719-030 Datasheet PDF : 4 Pages
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AM81719-030
RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 28 W MIN. WITH 6.7 dB GAIN
PRELIMINARY DATA
.400 SQ 2LFL (M147)
hermetically sealed
ORDER CODE
AM81719-030
BRANDING
81719-030
PIN CONNECTION
DESCRIPTION
The AM81719-030 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the 1.75
- 1.85 GHz frequency range.
An emitter site ballasted refractory/gold overlay
die geometry computerized automatic wire bonding
is employed to ensure long term reliability and
product consistency.
AM81719-030 is supplied in the industry-standard
AMPAC™ hermetic metal/ceramic package.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
PDISS
Power Dissipation*
IC
Device Current*
VCC
Collector-Supply Voltage*
TJ
Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
Unit
67.3
W
2.67
A
28
V
200
°C
− 65 to +200
°C
2.6
°C/W
September 1992
1/4
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