DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

AS7C33256PFD18A(2002) 查看數據表(PDF) - Alliance Semiconductor

零件编号
产品描述 (功能)
生产厂家
AS7C33256PFD18A
(Rev.:2002)
Alliance
Alliance Semiconductor Alliance
AS7C33256PFD18A Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
AS7C33256PFD16A
AS7C33256PFD18A
®
1 Input voltage ranges apply to 3.3V I/O operation. For 2.5V I/O operation, contact factory for input specifications.
2 VIL min. = –2.0V for pulse width less than 0.2 × tRC.
TQFP thermal resistance
Description
Thermal resistance
(junction to ambient)1
Thermal resistance
(junction to top of
case)<Superscript>1
Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA/JESD51
1 This parameter is sampled.
Symbol
θJA
θJC
Typical
40
8
Units
°C/W
°C/W
DC electrical characteristics
–200
–183
–166
–133
–100
Parameter Symbol
Test conditions
Min Max Min Max Min Max Min Max Min Max Unit
Input leakage
current1
Output leakage
current
Operating
power supply
current
Standby power
supply current
Output voltage
|ILI|
|ILO|
ICC2
ISB
ISB1
ISB2
VOL
VOH
VDD = Max, VIN = GND to – 2 – 2 – 2 – 2 – 2 µA
VDD
OE VIH, VDD = Max,
VOUT = GND to VDD
– 2 – 2 – 2 – 2 – 2 µA
CE0 = VIL, CE1 = VIH, CE2 =
VIL,
– 570 – 540 – 475 – 425 – 325 mA
f = fMax, IOUT = 0 mA
Deselected, f = fMax, ZZ VIL – 160 – 140 – 130 – 100 – 90
Deselected, f = 0, ZZ 0.2V
all VIN 0.2V or VDD
0.2V
– 30 – 30 – 30 – 30 – 30
mA
Deselected, f = fMax, ZZ VDD
0.2V
– 30 – 30 – 30 – 30 – 30
All VIN VIL or VIH
IOL = 8 mA, VDDQ = 3.465V – 0.4 – 0.4 – 0.4 – 0.4 – 0.4 V
IOH = –4 mA, VDDQ = 3.135V 2.4 – 2.4 – 2.4 – 2.4 – 2.4 –
1 LBO pin has an internal pull-up and input leakage = ±10 µa.
2 ICC give with no output loading. ICC increases with faster cycle times and greater output loading.
DC electrical characteristics for 2.5V I/O operation
–200
–183
–166
–133
–100
Parameter Symbol
Test conditions
Min Max Min Max Min Max Min Max Min Max Unit
Output leakage
current
Output voltage
|ILO|
OE VIH, VDD = Max,
VOUT = GND to VDD
–1 1 –1 1 –1 1 –1 1 –1 1 µA
VOL
IOL = 2 mA, VDDQ = 2.65V
– 0.7 – 0.7 – 0.7 – 0.7 – 0.7
V
VOH IOH = –2 mA, VDDQ = 2.35V 1.7 – 1.7 – 1.7 – 1.7 – 1.7 –
3/8/02; v.1.6
Alliance Semiconductor
P. 5 of 11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]