BUK9K18-40E 查看數據表（PDF） - Nexperia B.V. All rights reserved
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BUK9K18-40E Datasheet PDF : 13 Pages
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Nexperia
BUK9K18-40E
Dual N-channel 40 V, 19.5 mΩ logic level MOSFET
Symbol
Parameter
IDM
peak drain current
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode FET1 and FET2
IS
source current
ISM
peak source current
Avalanche Ruggedness FET1 and FET2
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Min Max Unit
-
124 A
-55 175 °C
-55 175 °C
-
260 °C
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
ID = 30 A; Vsup ≤ 40 V; VGS = 5 V;
Tj(init) = 25 °C; Fig. 4
-
-
[3][4] -
30
A
124 A
22
mJ
[1] Accumulated Pulse duration up to 50 hours delivers zero defect ppm
[2] Significantly longer life times are achieved by lowering Tj and or VGS.
[3] Refer to application note AN10273 for further information
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C
120
Pder
(%)
80
03aa16
40
ID
(A)
30
003aaj625
20
40
10
0
0
50
100
150
200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0
50
100
150
200
Tmb(°C)
Fig. 2. Continuous drain current as a function of
mounting base temperature
BUK9K18-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 March 2016
© Nexperia B.V. 2017. All rights reserved
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