BUK9K18-40E 查看數據表（PDF） - Nexperia B.V. All rights reserved

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BUK9K18-40E

Dual N-channel 40 V, 19.5 mΩ logic level MOSFET

Nexperia B.V. All rights reserved 

Nexperia

BUK9K18-40E

Dual N-channel 40 V, 19.5 mΩ logic level MOSFET

103

ID

(A)

102

10

1

Limit RDSon = VDS / ID

DC

003aaj627

tp = 10 us

100 us

1 ms

10 ms

100 ms

10-1

10-1

1

10

102

VDS (V)

Fig. 3. Safe operating area; continuous and peak drain current as a function of drain-source voltage

103

IAL

(A)

102

003aaj668

10

(1)

(2)

1

(3)

10-1

10-2

10-3

10-2

10-1

1

10

tAL (ms)

Fig. 4. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time, FET1 and

FET2

9. Thermal characteristics

Table 6.

Symbol

Rth(j-mb)

Thermal characteristics

Parameter

thermal resistance

from junction to

mounting base

Conditions

Fig. 5

BUK9K18-40E

Product data sheet

All information provided in this document is subject to legal disclaimers.

16 March 2016

Min Typ Max Unit

-

-

3.96 K/W

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