BCX59VII 查看數據表（PDF） - Infineon Technologies

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BCX59VII

NPN Silicon AF Transistors

Infineon Technologies 

BCX 58

BCX 59

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 2 mA

BCX 58

BCX 59

Collector-base breakdown voltage

IC = 10 µA

BCX 58

BCX 59

Emitter-base breakdown voltage

IE = 1 µA

Collector cutoff current

VCB = 32 V

VCB = 45 V

VCB = 32 V, TA = 150 ˚C

VCB = 45 V, TA = 150 ˚C

BCX 58

BCX 59

BCX 58

BCX 59

Collector cutoff current

VCE = 32 V, VBE = 0.2 V,TA = 100 ˚C

VCE = 45 V, VBE = 0.2 V,TA = 100 ˚C

Emitter cutoff current

VEB = 4 V

DC current gain

IC = 10 µA, VCE = 5 V

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X, BCX 59 X

IC = 2 mA, VCE = 5 V

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X, BCX 59 X

IC = 100 mA, VCE = 1 V1)

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X, BCX 59 X

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

V

32

–

–

45

–

–

V(BR)CB0

32

–

–

45

–

–

V(BR)EB0 7

–

–

ICB0

–

–

20 nA

–

–

20 nA

–

–

10

µA

–

–

10

µA

ICEX

µA

–

–

20

–

–

20

IEB0

–

–

20 nA

hFE

–

20

78

–

20

145 –

40

220 –

100 300 –

120 170 220

180 250 310

250 350 460

380 500 630

40

–

–

45

–

–

60

–

–

60

–

–

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

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