BF821 查看數據表（PDF） - General Semiconductor

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产品描述 (功能)

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BF821

Small Signal Transistors (PNP)

General Semiconductor 

BF821, BF823

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Collector-Base Breakdown Voltage BF821 –V(BR)CBO 300

–

at –IC = 100 µA, IE = 0

BF823 –V(BR)CBO 250

–

Collector-Emitter Breakdown Voltage BF823 –V(BR)CEO 250

–

at –IC = 10 mA, IB = 0

Collector-Emitter Breakdown Voltage BF821 –V(BR)CER 300

–

at RBE = 2.7 kΩ, –IC = 10 mA

Emitter-Base Breakdown Voltage

at –IE = 100 µA, IC = 0

–V(BR)EBO 5

–

Collector-Base Cutoff Current

at –VCB = 200 V, IE = 0

–ICBO

–

–

Collector-Emitter Cutoff Current

at RBE = 2.7 kΩ, –VCE = 250 V

at RBE = 2.7 kΩ, –VCE = 200 V, Tj = 150 °C

–ICER

–ICER

Collector Saturation Voltage

at –IC = 30 mA, –IB = 5 mA

–VCEsat

–

–

DC Current Gain

at –VCE = 20 V, –IC = 25 mA

hFE

50

–

Gain-Bandwidth Product

at –VCE = 10 V, –IC = 10 mA

fT

60

–

Feedback Capacitance

at –VCE = 30 V, –IC = 0, f = 1 MHz

Cre

–

–

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1) Device on fiberglass substrate, see layout

.30 (7.5)

.12 (3)

.59 (15)

.03 (0.8)

.47 (12)

0.2 (5)

.04 (1) .08 (2)

.04 (1)

.08 (2)

.06 (1.5)

.20 (5.1)

Dimensions in inches (millimeters)

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

Max.

Unit

–

V

–

V

–

V

–

V

–

V

10

nA

50

10

0.8

–

–

1.6

4301)

nA

µA

V

–

MHz

pF

K/W

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