FQP7N80C 查看數據表（PDF） - Thinki Semiconductor Co., Ltd.
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FQP7N80C Datasheet PDF : 8 Pages
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FQP7N80C
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.93
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
5.0
V
VGS = 10 V, ID = 3.3 A
-- 1.57 1.9
Ω
VDS = 50 V, ID = 3.3 A
(Note 4) --
5.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1290 1680 pF
-- 120 155
pF
--
10
13
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 6.6 A,
RG = 25 Ω
--
35
80
ns
-- 100 210
ns
--
50
110
ns
(Note 4, 5)
--
60 130
ns
VDS = 640 V, ID = 6.6 A,
--
27
35
nC
VGS = 10 V
-- 8.2
--
nC
(Note 4, 5) --
11
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
6.6
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- 26.4
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.6 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 6.6 A,
-- 650
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
7.0
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 6.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 2/8
http://www.thinkisemi.com.tw/
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