FQP9N08 查看數據表（PDF） - Fairchild Semiconductor
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FQP9N08 Datasheet PDF : 8 Pages
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Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.0
0.8
V = 10V
GS
0.6
V = 20V
GS
0.4
0.2
※ Note : TJ = 25℃
0.0
0
4
8
12
16
20
24
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
500
400
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
300
※ Notes :
1. VGS = 0 V
C
2. f = 1 MHz
iss
200
Coss
100
0
10-1
C
rss
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
175℃
100 25℃
10-1
2
-55℃
※ Notes :
1. VDS = 30V
2. 250μs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
175℃
25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
V = 64V
DS
8
6
4
2
※ Note : ID = 9.3A
0
0
1
2
3
4
5
6
7
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2, December 2000
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